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智能型PECVD系統（含壓力控制系統）/Intelligent PECVD system with pressure control system
Intelligent PECVD equipment is the latest type of equipment at present, which integrates all control parts into one. This kind of equipment is patented by our company in 2013.
智能PECVD設備是目前最新型的一款設備，將所有的控制部分集為一體，此款設備是我司在2013年獲得專利的設備.
Can be equipped with PE RF power supply, CVD system upgrade to PECVD.
可配備PE射頻電源，將CVD系統升級為PECVD.
When the atmosphere involved in the reaction enters the furnace tube under the action of radio frequency power to produce the ionizer, the reaction can be more adequate.
當參與反應的氣氛進入爐管在射頻電源的作用下產生離子體，可使反應更加充分.
At the same time, plasma plays an enhanced role, thus optimizing the technological conditions of the experiment to a great extent.
同時等離子體起增強的作用，從而很大程度上優化實驗的工藝條件.
The slide track PECVD system developed by our company can make the entire experimental chamber in the glow generation area.
我公司研制的滑軌式PECVD系統能使整個實驗腔體都處于輝光產生區.
The glow is uniform and equivalent, and this technique can solve the unstable state of traditional plasma.
輝光均勻等效，這種技術很好的解決了傳統等離子工作不穩定狀態.
In this way, the range and strength of ionization is one hundred times that of traditional PECVD, and the uneven accumulation of materials can be solved.
這樣離子化的范圍和強度是傳統PECVD的百倍，并解決了物料不均勻堆積現象.
Compared with traditional CVD system, the growth temperature is lower.
與傳統CVD系統比較，生長溫度更低.
Use slide furnace to achieve rapid heating and cooling.
使用滑軌爐實現快速升溫和降溫.
The patented technology makes the whole tube glow uniform, equivalent, uniform growth.
設備特有的專利技術使得整管輝光均勻等效，均勻生長.
①High deposition rate: radiofrequency glow technology greatly improves the deposition rate of the film, which can reach 10A /S.
薄膜沉積速率高：射頻輝光技術，大大的提高了薄膜的沉積速率，沉積速率可達10Å/S.
②High uniformity of large area: advanced multi-point RF feed technology, special gas distribution and heating technology is adopted, which makes the uniformity index of the film reach 8%.
大面積均勻性高：采用了先進的多點射頻饋入技術，特殊氣路分布和加熱技術等，使得薄膜均勻性指標達到8%.
③High consistency: With the advanced design concept of the semiconductor industry, the deviation between the substrate at one deposition is less than 2%.
一致性高：用半導體行業的先進設計理念，使得一次沉積的各基片之間偏差低于2%.
④High process stability: highly stable equipment to ensure the continuity and stability of the process.
工藝穩定性高：高度穩定的設備保證了工藝的連續和穩定.
⑥Patent No.: ZL201320052532.0 (patented product, anti-counterfeiting must be investigated).
專利號：ZL201320052532.0 （專利產品，防偽必究）.
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Single temperature zone heating system 單溫區加熱系統 |
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Power supply 電源 |
The input voltage is single-phase 220V. 50/60 HZ 輸入電壓為單相、220V、50Hz Rated powe 3kw 額定功率 3kw |
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Maximum temperature 最高溫度 |
1200℃ |
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Temperature of service 使用溫度 |
≤1100℃ |
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Temperature Controller 控溫方式 |
30 sections can be programmed temperature control, PID parameter self-tuning 30段可編程控溫，PID參數自整定 Operation interface for 10 "industrial computer, built-in PLC control program 操作界面為10”工控電腦，內置PLC控制程序 The temperature control system and slide furnace sliding (time and distance) can be set as program control 可將溫控系統、滑軌爐滑動（時間和距離）設定為程序控制 |
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Heating Zone 加熱 |
Heating Zone Length:440mm 加熱區長度：440mm Constant Temperature Zone: 200mm 恒溫區長度：200mm Temperature Accuracy: +/- 1℃. 控溫精度：+/- 1℃
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Effective furnace size 爐膛有效尺寸 |
Ф60*1650mm |
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Heating Elements 加熱元件 |
Resistance wire, Fe-Cr-Al Alloy doped by Mo 電阻絲（摻鉬鐵鉻鋁合金） Type K thermocouple K型熱電偶
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Furnace chamber material 爐膛材料 |
Alumina, high temperature fiber products 氧化鋁、高溫纖維制品
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PE radio frequency power supply PE射頻電源 The CVD system can be equipped with PE RF power supply to upgrade the CVD system to PECVD. When the atmosphere involved in the reaction enters the furnace tube under the action of radio frequency power to produce the ionizer, the reaction can be more adequate. At the same time, plasma plays an enhanced role, thus optimizing the technological conditions of the experiment to a great extent. 該CVD系統可配備PE射頻電源，將CVD系統升級為PECVD。當參與反應的氣氛進入爐管在射頻電源的作用下產生離子體，可使反應更加充分。同時等離子體起增強的作用，從而很大程度上優化實驗的工藝條件。 |
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Frequency of signal 信號頻率 |
13.56 MHz±0.005% |
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Power output range 功率輸出范圍 |
500W |
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Rf output interface 射頻輸出接口 |
50 Ω, N-type, female |
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Stability of power 功率穩定度 |
±0.1% |
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Component of harmonic wave諧波分量 |
≤-50dbc |
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Supply voltage 供電電壓 |
Single-phase AC (187V-253V) frequency 50/60 Hz 單相交流（187V-253V） 頻率50/60HZ |
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Efficiency of whole machine 整機效率 |
>=70% |
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Factor of power 功率因素 |
>=90% |
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Mode of cooling 冷卻方式 |
Forced air cooling 強制風冷 |
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Five-way proton flow control system 五路質子流量控制系統 The gas supply system can control the mixing ratio of four kinds of gas according to different flow rates, and can also be equipped with gas washing device according to the experimental requirements. The mass flowmeter is installed in the sealed movable cabinet, which is composed of super clean double cast stainless steel pipe and precision double card sleeve joint, and is controlled by touch screen. 供氣系統是一種可控制4種氣體按不同流量進行混合配比，也可根據實驗需求加裝洗氣裝置，質量流量計安裝于密封的可移動機柜內，由超潔雙拋不銹鋼管與精密雙卡套接頭連接組成，觸摸屏控制。 |
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Connection header type 連接頭類型 |
Double sleeve stainless steel connector 雙卡套不銹鋼接頭 |
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Standard range 標準量程 |
氬氣：1000sccm 氫氣：300sccm 甲烷：100sccm 氮氣：500sccm 氧氣：100scc |
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Accuracy 準確度 |
±1.5% |
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Linear 線性 |
±0.5～1.5% |
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Repetition accuracy 重復精度 |
±0.2% |
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Response time 響應時間 |
Gas characteristics: 1 ~ 4 Sec, electrical characteristics: 10 Sec 氣特性：1～4 Sec，電特性：10 Sec |
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Working pressure difference range 工作壓差范圍 |
0.1～0.5 MPa |
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Maximum pressure 最大壓力 |
3MPa |
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Interface 接口 |
Φ6 or 1/4 "is optional Φ6或者1/4''可選 |
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Display 顯示 |
4-digit display 4位數字顯示 |
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Operating ambient temperature 工作環境溫度 |
5~45 high purity gas 5~45高純氣體 |
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Pressure vacuum gauge 壓力真空表 |
-0.1 ~ 0.15MPa, 0.01MPa/grid －0.1～0.15 MPa, 0.01 MPa/格 |
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Vacuum machine set 真空機組 The vacuum unit is internally equipped with a bipolar rotary vane mechanical pump, a set of capacitance vacuum gauge, and supporting corrugated pipes, manual flapper valves, clamps and other connecting parts. The cold limit vacuum of the equipment can reach 0.5Pa. 真空機組，內部安裝雙極旋片機械泵1臺，電容真空計1套，并含有配套使用的波紋管，手動擋板閥，卡箍等連接部件。設備冷態極限真空可達0.5Pa。 |
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Operating voltage 工作電壓 |
220V±10% 50~60HZ |
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Power 功率 |
1KW |
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Rate of air extraction 抽氣速率 |
16m³/h |
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Ultimate vacuum 極限真空 |
0.5Pa |
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Air inlet diameter 進氣口口徑 |
KF25 |
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Exhaust port diameter 排氣口口徑 |
KF25 |
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Mode of connection 連接方式 |
The bellows are used, and the manual flapper valve is connected with the bellows 采用波紋管，手動擋板閥與波紋管相連
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Capacitance vacuum gauge 電容真空計 |
ZDM-I(with communication), can communicate with the touch screen ZDM-I(帶通訊），可以和觸摸屏通訊上 Vacuum gauge measuring range is optional from 5-5000pa 真空規管測量范圍可選5-5000pa There is no need for coefficient conversion due to different gas types 不需因測量氣體種類不同而需要系數轉換 With high accuracy and repeatability, the response time is short 具有較高的精確度和重復性，響應時間較短 |
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Pressure control system 壓力控制系統 |
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Main components 主要部件 |
Butterfly valve, pressure controller, capacitance vacuum gauge composition 蝶閥、壓力控制器、電容真空計組成 |
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Effect 作用 |
According to the experimental requirements, add a butterfly valve (regulating valve) and a vacuum gauge between the outlet and the pump The vacuum gauge can detect the pressure in the pipe and adjust the opening size of the butterfly valve (regulator valve) through PLC 真空計可檢測管內壓力，通過 PLC 調節蝶閥（調節閥）開啟的大小 To achieve the control pipe pressure unchanged 以達到控制管內壓力不變 |
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Range of pressure 壓力范圍 |
100~100000Pa |
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Precision of control 控制精度 |
The measured value is ±5% 測量值±5% |
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